Optimized High Performance Characteristics of a Designed 420nm InGaN/AlGaN MQW Blue Violet Laser

Abstract

In this work, the performance characteristics of a designed 420nm multi quantum well (MQW) Blue Violet Laser using InGaN/AlGaN materials are presented. A high performance of the designed laser is obtained with the optimized values of injection current and differential gain. A maximum optical output power of 214.45mW is obtained for 87mA injection current and 1x10-16cm2 differential gain, where, the threshold current is 8.7mA. The modal gain of 74.155 cm-1 and the differential quantum efficiency of 67.02% are obtained. A maximum resonance frequency of 7.9675GHz and the corresponding modulation bandwidth of 10.75 GHz are obtained for the same values of injection current and differential gain. The performance of the laser is also analyzed by varying injection current and differential gain. A maximum output power of 214.45mW is obtained for 117mA injection current and 4x10-16cm2 differential gain of. For this, a maximum resonance frequency of 18.742 GHz and the corresponding modulation bandwidth of 25 GHz are obtained which enhances the dynamic performance of the designed laser for applications in data storage, optical discs and displays.