Effect of Mobility and Velocity Saturation on Drain Current of Silicon N-MOSFET

Abstract

In this paper, drain current as a function of mobility and velocity saturation isinvestigated individually at room temperature and Id-Vds characteristics curves are analyzed atthreshold voltage (Vgs) of 0.73V for short channel Silicon n-MOS. For characterization, n-MOSmodel N08 is chosen which has specific mobility (μn) of 424.9 cm2/Vs and saturation velocity(vsat) of 9.127×104 cm/s. The simulation is accomplished using LTSPICE and the data isanalyzed and characterized using MatLab. A good agreement between the model and themeasured data is obtained. For both cases it is found that the drain current increasessignificantly with the increase in mobility and saturation velocity.