Design and Performance Analysis of a 420nm Oxide Confined MQW Blue-Violet Laser

Abstract

In this work, the performance characteristics of an InGaN-based 420nm oxide confined multiple quantum well (MQW) blue-violet laser has been evaluated through various computations. Also the difference between the performance analysis of the designed laser with oxide confinement layer and without oxide confinement layer has been observed. The material gain of In_0.1227Ga_0.8773N/Al_0.08Ga_0.92N MQW edge emitting laser (EEL) has been theoretically obtained. The peak material gain obtained from the analysis has been used to study the performance of the designed laser. The threshold current has been reduced from 10.2mA to 3.4mA by using the oxide confinement layer. The injection current which is almost 13 times the threshold current has been chosen for both the designed laser with and without oxide confinement layer. The resonant frequency is 16.2GHz and modulation bandwidth 28.2GHz for the designed laser without oxide confinement layer at an injection current 130mA. The same value of resonant frequency and modulation bandwidth has been achieved for the designed laser with oxide confinement layer at an injection current of only 45mA. The maximum output power of the designed oxide confined laser is obtained as 73.4mW. The designed laser with oxide confinement layer has been established to give better performance.